GROWTH OF 6H-SIC HOMOEPITAXY ON SUBSTRATES OFF-CUT BETWEEN THE [01-10] AND [10-10] PLANES

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" GROWTH OF 6H-SIC HOMOEPITAXY ON SUBSTRATES OFF-CUT BETWEEN THE [01-10] AND [10-10] PLANES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	151906
Doc. No	:	ET23698
Main Entry	:	James Dennis Vandersand Jr.
Title Proper	:	GROWTH OF 6H-SIC HOMOEPITAXY ON SUBSTRATES OFF-CUT BETWEEN THE [01-10] AND [10-10] PLANES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	The wide band-gap semiconductor silicon carbide has tremendous potential foruse in high power, high temperature, and high frequency electronic devices. One of themore important design factors for these devices is the epitaxial layer. It is desirable thatthis thin film have uniform polytype, thickness, and impurity concentration, as well as bedefect free. One method used for SiC to ensure epitaxial layers with homogenouspolytype is to cut wafers from a boule that has been tilted towards a specificcrystallographic face at a fixed angle (known as ب‍off cut.(پ The purpose of this thesis wasto investigate the growth mechanisms of alternative boule tilting directions with 6H-SiC.Four alternative crystallographic tilting faces were chosen: <1230>, <1340>, <2130>,and <3140>. A lightly doped 1um-thick layer.............-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL46949.pdf
Title and statement of responsibility and	:	GROWTH OF 6H-SIC HOMOEPITAXY ON SUBSTRATES OFF-CUT BETWEEN THE [01-10] AND [10-10] PLANES [Thesis]