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Document Type : Latin Dissertation
Language of Document : English
Record Number : 151878
Doc. No : ET23670
Main Entry : Balasubramanian Murugan
Title Proper : STUDY OF SUBTHRESHOLD BEHAVIOR OF FINFET
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : The study of subthreshold behavior of Metal Oxide Semiconductor Field EffectTransistor (MOSFET) is critically important in the case of submicron devices for thesuccessful design and implementation of digital circuits. Fin Field Effect Transistor(FinFET) is considered to be an alternate MOSFET structure in the deep sub-micronregime. A 3D Poisson equation solver is employed to study the subthreshold behavior ofFinFET. Based on potential distribution inside the fin, the appropriate band bending andthe subthreshold value called the S-factor is calculated. It is observed that the S-factor ofthe device increases as the channel width, Tfi, increases. This is attributed to the fact thatthe change in the band bending is less............-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL46917.pdf
Title and statement of responsibility and : STUDY OF SUBTHRESHOLD BEHAVIOR OF FINFET [Thesis]
 
 
 
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