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Document Type : Latin Dissertation
Language of Document : English
Record Number : 151733
Doc. No : ET23525
Main Entry : Pave1 S. Plekhanov
Title Proper : DEFECTS AND GETTERING OF IMPURITIES IN SILICON
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : Processes of formation of extended defects in silicon and the role of impurities inthem, as weU as the gettering of impurities from precipitated state, the electrical activityof impurity precipitates and their impact on performance of solar cells are considered inthe thesis.The nucleation and growth of voids and vacancy-type dislocation -loops during Sicrystal growth under Si vacancy supersaturation conditions have been numericallymodeled. The two processes are treated in conjunction with each other. Based on thecompetition between them, the Si vacancy formation enthalpy range and the voidnucleation temperature are determined,The role of oxygen in the formation of voids in Si has been considered, and themathematical description of the process has been formulated. It is shown thatexperimentally observed composite void-oxide defects are likely to nucleate fxst as.......-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL46766.pdf
Title and statement of responsibility and : DEFECTS AND GETTERING OF IMPURITIES IN SILICON [Thesis]
 
 
 
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