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Document Type : Latin Dissertation
Language of Document : English
Record Number : 151719
Doc. No : ET23511
Main Entry : Huy Anh Le, Ph-D.
Title Proper : -A STUDY OF VIA ELECTROMIGRATION IN VLSI CIRCUITS
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : This research work studies the geometrical effect on electromigration, which is aZailcre mechanism due to momentum exchange of moving electrons and host lattice, inVery Large Scale Integrated (VLSI) circuits. In a typical VLSI circuit, there existmillions of transistors connected by a system of rnuItileve1 metal interconnect. As theVLSI circuit continually shrinks in size for better fbnctional performance, the embeddedtransistors increase in number leading to more levels of metal stacked vertically. Via orplug, the verticd connection between two levels of metal conductor, becomes importantand poses as the rehbility bottleneck of the whole metal interconnect system. Reliabilityrequirement if met by the via, the bottleneck, guarantees iifetime satisfaction for thewhole interconnect system.......-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL46752.pdf
Title and statement of responsibility and : -A STUDY OF VIA ELECTROMIGRATION IN VLSI CIRCUITS [Thesis]
 
 
 
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