CMOS PIEZORESISTIVE STRESS SENSORS ON ( 1 I I ) SILICON

منو

" CMOS PIEZORESISTIVE STRESS SENSORS ON ( 1 I I ) SILICON "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	151649
Doc. No	:	ET23441
Main Entry	:	Jianping Xu
Title Proper	:	CMOS PIEZORESISTIVE STRESS SENSORS ON ( 1 I I ) SILICON
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	An extensive experimental study has been made of the room temperaturepiezoresistive characteristics of n-type and p-type devices on 11 1 1 o silicon. includingresistors. van der Pauw test structures (VDPs). field-effect transistors (FETs) andinversion layer van der Pauw structures (ILVDPs). Test chips with these structures havebeen designed and fabricated on (1 1 1 ) silicon using a ( 1 1 1 ) CMOS process developed aspart of this work. Various structures have been compared with each other while focusing.....-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL46680.pdf
Title and statement of responsibility and	:	CMOS PIEZORESISTIVE STRESS SENSORS ON ( 1 I I ) SILICON [Thesis]