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Document Type : Latin Dissertation
Language of Document : English
Record Number : 151649
Doc. No : ET23441
Main Entry : Jianping Xu
Title Proper : CMOS PIEZORESISTIVE STRESS SENSORS ON ( 1 I I ) SILICON
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : An extensive experimental study has been made of the room temperaturepiezoresistive characteristics of n-type and p-type devices on 11 1 1 o silicon. includingresistors. van der Pauw test structures (VDPs). field-effect transistors (FETs) andinversion layer van der Pauw structures (ILVDPs). Test chips with these structures havebeen designed and fabricated on (1 1 1 ) silicon using a ( 1 1 1 ) CMOS process developed aspart of this work. Various structures have been compared with each other while focusing.....-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL46680.pdf
Title and statement of responsibility and : CMOS PIEZORESISTIVE STRESS SENSORS ON ( 1 I I ) SILICON [Thesis]
 
 
 
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