ADVANCED CHARACTERIZATION OF DOUBLE-GATE (GATE- ALL-AROUND) DEVICES AND CIRCUITS.

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" ADVANCED CHARACTERIZATION OF DOUBLE-GATE (GATE- ALL-AROUND) DEVICES AND CIRCUITS. "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	151641
Doc. No	:	ET23433
Main Entry	:	Anne Marie-Paule Vandooren
Title Proper	:	ADVANCED CHARACTERIZATION OF DOUBLE-GATE (GATE- ALL-AROUND) DEVICES AND CIRCUITS.
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	S ilicon-On-Insulator (SOI) Double-Gate devices are very promisingcandidates for deep sub-micron and low-power low-voltage applications. The transistorsexhibit higher drain current, steeper subthreshold slope, and better short-channel effects.They also show strong hardness in hostile environments such as radiative or extremetemperature environments.The Double-Gate Gate-All-Around (SOI) technology is described in term of devicestructure, fabrication process, specific properties and device scaling.Radiation and extreme temperature effects on device parameters are investigated. Thespecific case of Operational Transconductance Amplifiers (OTAs) is studied. A g,/Id-based methodology is applied. The evolution with dose and temperature of the OTAs.....-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL46672.pdf
Title and statement of responsibility and	:	ADVANCED CHARACTERIZATION OF DOUBLE-GATE (GATE- ALL-AROUND) DEVICES AND CIRCUITS. [Thesis]