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Document Type : Latin Dissertation
Language of Document : English
Record Number : 151576
Doc. No : ET23368
Main Entry : Taiheui Cho, Bas., MS.
Title Proper : Anisotropy of Low Dielectric Constant Materials and Reliability of Cuhw-k Interconnects
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : With demands for higher performance and impmvement in technologies,device densities are continuously increased through miniaturization of integratedcircuits. The complexity of interconnect structures increasing due to higherdevice density pushes to use multilevel metallization in microelectronic devices.However, the reduction of intercomect dimensions and the use of multileve1metallization increase propagation delay and crosstalk of signals inmicroelectronic circuits. This movement directly opposes the current technologytrend of increasing clock speeds by scaling down the feature sizes of devices. Thepropagation delay (FtC delay) is a fhction of the resistance (R) of theinterconnect metal and the capacitance (C) of the structure incorporated with the.....-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL46607.pdf
Title and statement of responsibility and : Anisotropy of Low Dielectric Constant Materials and Reliability of Cuhw-k Interconnects [Thesis]
 
 
 
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