DEVELOPMENT OF IMPROVED METHODOLOGY FOR CHARACTERIZATION AND SIMULATION OF ELECTROSTATIC DISCHARGE (ESD) IN MOS DEVICES AND ICS

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" DEVELOPMENT OF IMPROVED METHODOLOGY FOR CHARACTERIZATION AND SIMULATION OF ELECTROSTATIC DISCHARGE (ESD) IN MOS DEVICES AND ICS "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	151522
Doc. No	:	ET23314
Main Entry	:	JUI-CHU LEE
Title Proper	:	DEVELOPMENT OF IMPROVED METHODOLOGY FOR CHARACTERIZATION AND SIMULATION OF ELECTROSTATIC DISCHARGE (ESD) IN MOS DEVICES AND ICS
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Electrostatic charge buildup and dissipation or discharge commonly occursthroughout nature. When this discharged takes place through a discrete semiconductordevice or a semiconductor device in an integrated circuit, the incident is referred to as anelectrostatic discharge (ESD) event. ESD often results in the failure of semiconductorcomponents, as well as the system containing these devices. The effect of the humanbody model (HBM) which is one of the ESD events on semiconductor devices will befocal to this research.This research first gives an overview of the ESD sources, models and permanentfailure mechanism. Variable protection circuits are examined to look at ways of....-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL46551.pdf
Title and statement of responsibility and	:	DEVELOPMENT OF IMPROVED METHODOLOGY FOR CHARACTERIZATION AND SIMULATION OF ELECTROSTATIC DISCHARGE (ESD) IN MOS DEVICES AND ICS [Thesis]