DESIGN AND OPTIMIZATION OF A FULLY-DIFFERENTIAL, FULLY-INTEGRATED METAL-OXIDE-SEMICONDUCTOR

دانشگاه آزاد اسلامی اصفهان(خوراسگان)

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" DESIGN AND OPTIMIZATION OF A FULLY-DIFFERENTIAL, FULLY-INTEGRATED METAL-OXIDE-SEMICONDUCTOR "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	151510
Doc. No	:	ET23302
Main Entry	:	Hee-Tae Ahn
Title Proper	:	DESIGN AND OPTIMIZATION OF A FULLY-DIFFERENTIAL, FULLY-INTEGRATED METAL-OXIDE-SEMICONDUCTOR
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Modem sophisticated and complex electronic systems demand a high level ofcircuit integration with higher operationd frequencies using low cost fabricationtechnologies, such as digital complementary-metal-oxide-semiconductor (CMOS). Oneof the major challenges in circuit design is the difficulty in implementing high frequencyanalog circuits on these types of technologies. Recently. a fully integrated single-endeddistributed amplifier with onchip spiral inductors in a CMOS technology has beenpresented. However, the unavoidable source degeneration effect, which is mainly due tobonding wires and lead frame inductance in a packaged single-ended distributedamplifier, degrades the gain-bandwidth performance significantly at high frequencies. Inthis research, a fully-differential and fully-integrated distributed amplifier (DA) with5.5dB gain and 8.5GHz bandwidth in....-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL46539.pdf
Title and statement of responsibility and	:	DESIGN AND OPTIMIZATION OF A FULLY-DIFFERENTIAL, FULLY-INTEGRATED METAL-OXIDE-SEMICONDUCTOR [Thesis]