The relationship between growth parameters and the control of crystallographic and electronic properties

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" The relationship between growth parameters and the control of crystallographic and electronic properties "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	151486
Doc. No	:	ET23278
Main Entry	:	David Francis Bliss
Title Proper	:	The relationship between growth parameters and the control of crystallographic and electronic properties
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	This research advances basic understanding in the field of indium phosphide (W)crystal growth and &fact control. Control of defects is a paramount concern in InP bulkcrystal growth, since the objective is to grow a perfect single crystal. Unfortunately, thecrystal growth environment is disordered and turbulent due to the high pressure andextreme thermaI gradients, admitting many defects such as twins, dislocations mdprecipitates. Only by imposing engineering controls, can sufficiently high yield andquality be obtained so that crystal growth becomes economically viable. Engineeringcontrols developed in this research effort m: applied magnetic fields,....-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL46515.pdf
Title and statement of responsibility and	:	The relationship between growth parameters and the control of crystallographic and electronic properties [Thesis]