خط مشی دسترسیدرباره ما
ثبت نامثبت نام
راهنماراهنما
فارسی
ورودورود
صفحه اصلیصفحه اصلی
جستجوی مدارک
تمام متن
منابع دیجیتالی
رکورد قبلیرکورد بعدی
Document Type : Latin Dissertation
Language of Document : English
Record Number : 151320
Doc. No : ET23112
Main Entry : Xuguang Wang
Title Proper : Electricai Characterizations of L W 3 Thin F i in a Metal-Ferroelectric- Semiconductor Capacitor
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : A LiNb03 thin fdm Metal-Ferroelectric-Semiconductor capacitor is analyzed withvarious electrical characterization methods for studying the polarization switching and thethin fdm conduction behavior. The polarization density vs. electric field @-E curve showsthat the remnant polarization is 16.85pC/cm2 and the coercive field is 117.25 KVkm whenmaximum applied field is 286.2KVkm for a sinusoidal input waveform. The capacitancevs. voltage bias (C-V) curve fiuther demonstrates that the polarization charge is thedominant charge in controlling the ferroelectric semiconductor interface property. Theswitching transient current curve from a dual polarity four pulses chain study (P-S) givesthe switching time of the sample about 80-100ns. Current vs. voltage (14) curve is.-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL46346.pdf
Title and statement of responsibility and : Electricai Characterizations of L W 3 Thin F i in a Metal-Ferroelectric- Semiconductor Capacitor [Thesis]
 
 
 
(در صورت عدم وضوح تصویر اینجا را کلیک نمایید)