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Document Type : Latin Dissertation
Language of Document : English
Record Number : 151210
Doc. No : ET23002
Main Entry : Aravinda N. Sringarapuram,
Title Proper : STUDY OF ELECTRICAL AND DIELECTRIC PROPERTIES OF FERROELECTRIC THIN FILLM CAPACITORS FOR DRAM AND NVRAM APPLICATIONS
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : The last couple of decades have witnessed a phenomenal growth in the computer andother related industries. This has motivated research organizations to invest billions ofdollars in the development of memory-related technologies, as computer performancehighly depends on the performance of the memory that is being interfaced to its CPU.Two of the major types of semiconductor memory are the DRAMS (Dynamic RandomAccess Memory) and NVRAMs (Non-Volatile Random Access Memory). Both DRkVand NVRAM make use of storage capacitors to store information. The electrical anddielectric properties of these storage capacitors account for the overall performance of thememories, as they determine the storage density and durability of memory chips.This research has focused on the fabrication of thin film capacitors, which are used asstorage capacitors in semiconductor memories. The research has also emphasized thefabrication of these thin film capacitors and the study of their dielectric and electricalproperties by performing tests on fabricated samples.The compounds from a class of ceramics called ferroelectrics were chosen asdielectric materials for the capacitors. Ferroelectric materials have high dielectricconstant and they exhibit polarization. High dielectric constant-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL46231.pdf
Title and statement of responsibility and : STUDY OF ELECTRICAL AND DIELECTRIC PROPERTIES OF FERROELECTRIC THIN FILLM CAPACITORS FOR DRAM AND NVRAM APPLICATIONS [Thesis]
 
 
 
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