DESIGN AND DEVELOPMENT OF METHODS AND EXPERIMENTS FOR SEMICONDUCTOR MEASUREMENTS

منو

" DESIGN AND DEVELOPMENT OF METHODS AND EXPERIMENTS FOR SEMICONDUCTOR MEASUREMENTS "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	151167
Doc. No	:	ET22959
Main Entry	:	Rizwan Shuj a
Title Proper	:	DESIGN AND DEVELOPMENT OF METHODS AND EXPERIMENTS FOR SEMICONDUCTOR MEASUREMENTS
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	In this thesis the behavior of various semiconductor devices was observed andrecorded under different conditions. To achieve those objectives three experiments weredesigned and performed. The first experiment named "Diode Transient Response andthe Measurement of the Lzyeetime of an Elecfron or a Hole in a Diode" was performedto calculate the lifetime of a charge carrier, and to find out the reason behind the delay(reverse recovery time) involved in a diode switching from the ON state to the OFF statewith the appIication of a negative voltage fiom a forward bias condition in steady state....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL46187.pdf
Title and statement of responsibility and	:	DESIGN AND DEVELOPMENT OF METHODS AND EXPERIMENTS FOR SEMICONDUCTOR MEASUREMENTS [Thesis]