COBALT SILICIDE CHARACTERIZATION

منو

" COBALT SILICIDE CHARACTERIZATION "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	151155
Doc. No	:	ET22947
Main Entry	:	Donovan Alldredge
Title Proper	:	COBALT SILICIDE CHARACTERIZATION
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Decreasing feature sizes of advanced ULSI (Ultra large-scale integrated) devices are driven by a desire for improvedevice performance and an increase in the number of deviceson a single wafer. Small feature sizes cause increasedresistance, which leads to degraded device performances-Silicides can reduce sheet resistance on poly-silicon linesand shallow junctions. The mostly widely accepted silicideprocess, Titanium Silicide ( T i S i 2 ) , was adopted because ofits low resistivity. Major limitations of TiSiz include aninability to form on narrow poly-lines and gate shorting.Cobalt silicide is an alternative to TiSi;! due to itsscalability (down to 0.065 pn2) while providing acceptable...,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL46175.pdf
Title and statement of responsibility and	:	COBALT SILICIDE CHARACTERIZATION [Thesis]