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Document Type : Latin Dissertation
Language of Document : English
Record Number : 151155
Doc. No : ET22947
Main Entry : Donovan Alldredge
Title Proper : COBALT SILICIDE CHARACTERIZATION
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : Decreasing feature sizes of advanced ULSI (Ultra large-scale integrated) devices are driven by a desire for improvedevice performance and an increase in the number of deviceson a single wafer. Small feature sizes cause increasedresistance, which leads to degraded device performances-Silicides can reduce sheet resistance on poly-silicon linesand shallow junctions. The mostly widely accepted silicideprocess, Titanium Silicide ( T i S i 2 ) , was adopted because ofits low resistivity. Major limitations of TiSiz include aninability to form on narrow poly-lines and gate shorting.Cobalt silicide is an alternative to TiSi;! due to itsscalability (down to 0.065 pn2) while providing acceptable...,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL46175.pdf
Title and statement of responsibility and : COBALT SILICIDE CHARACTERIZATION [Thesis]
 
 
 
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