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Document Type : Latin Dissertation
Language of Document : English
Record Number : 151152
Doc. No : ET22944
Main Entry : Rao Yeswanth Lakshman
Title Proper : A PROCESS FOR HYDROGENATION OF SILICON CARBIDE CRYSTALS
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : Doping control is the most important technology for any semiconductor system.In spite of significant progress in the doping of SiC, advancements are needed in thegrowth techniques and dopant incorporation. During processes such as Chemical VaporDeposition (CVD), hydrogen is known to be trapped at defects or impurities and to alterthe electrical properties of the material. This effect is known...,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL46172.pdf
Title and statement of responsibility and : A PROCESS FOR HYDROGENATION OF SILICON CARBIDE CRYSTALS [Thesis]
 
 
 
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