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Document Type : Latin Dissertation
Language of Document : English
Record Number : 151132
Doc. No : ET22924
Main Entry : Carlo Requiao da Cunha
Title Proper : PROCESSING AND CHARACTERIZATION OF CONTACTS ON MBEGROWN GALLIUM NITRIDE
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : Gallium nitride, a III-V compound semiconductor, is a good candidate forapplications such as blue laser diodes and power devices due to its wide bandgap. One ofthe main challenges related to this compound is the growth of high quality crystals. Ifcrystals with high level of purity are grown, the carrier concentration is therefore low,and the resulting high resistivity of the bulk imposes some difficulties for capacitancerelatedmeasurements. This thesis deals with the problem of processing andcharacterization of contacts on highly resistive materials such as unintentionally doped ntypegallium nitride. The ideal electrical model of a depletion layer is analyzed, andmodifications are proposed in order to set up a framework for measurements on lowcarrier concentration materials. A silicon wafer was processed to emulate the behavior ofunintentionally doped gallium nitride and validate the developed characterizationtechniques. Measurements obtained from two samples of gallium nitride are included toillustrate how these studied methodologies can be used to obtain semiconductorparameters such as carrier concentration and built-in voltage...,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL46152.pdf
Title and statement of responsibility and : PROCESSING AND CHARACTERIZATION OF CONTACTS ON MBEGROWN GALLIUM NITRIDE [Thesis]
 
 
 
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