PECVD of UNDOPED SILICON GLASS FXLM on 3OOmm WAFERS

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" PECVD of UNDOPED SILICON GLASS FXLM on 3OOmm WAFERS "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	151106
Doc. No	:	ET22898
Main Entry	:	Tom Karnp
Title Proper	:	PECVD of UNDOPED SILICON GLASS FXLM on 3OOmm WAFERS
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	The conversion from 200mrn to 3 0 0 m wafers introduces many new processchallenges. Plasma enhanced chemical vapor deposition (PECVD) processes are noexception. The development and characterization of an Undoped Silicon Glass (USG)thin film was performed on 300mm wafers using a Mattson Technology R & D PECVDsystem. The PECVD chamber was designed specifically for 300rnm wafers and containedimprovements over the 200mm system. Process characterization was done coveringparameters such as deposition rate, thickness and uniformity, refractive index, stress, stepcoverage. particles, and metallic contamination. It was found that this scaled up 300mmsize dual plate diode type PECVD reactor is able to meet and exceed industryspecifications. Over a hundred..,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL46126.pdf
Title and statement of responsibility and	:	PECVD of UNDOPED SILICON GLASS FXLM on 3OOmm WAFERS [Thesis]