Minority Carrier Injection In Epitaxial Schottky Barrier Diodes

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" Minority Carrier Injection In Epitaxial Schottky Barrier Diodes "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	151103
Doc. No	:	ET22895
Main Entry	:	Shaikh Hasibul Majid
Title Proper	:	Minority Carrier Injection In Epitaxial Schottky Barrier Diodes
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Lightly doped semiwnductor region of an epitazial Schottky B a m k (SB) diodeis capable of sustaining large reverse voltage- To fabricute such SB diodes, higherresistivity and thicker layers are needed. The high resistance has detrr-mental efiecton the performance of SB diode. The resistance can be reduced by minority cum-erinjection. An SB diode with higher barn-er height injects an appreciable amountof minority cam-em at low fonuard bias voltage. The J-V characteristic of an SBdiode with injection of minority carriers are signifiuzntly d t e d from the classicalezponentid relatiotrship. To analyze the different characteristics of an SB diode amodd in wrpor~ting drift, diffusion currents, recombination and blocking propertiesof the lowhigh (n-n') interface is developed. At low level of znjection the J- Vfollows dassical relationship. A significant deviation in J-V characteristic from itsezponential behaviour..,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL46123.pdf
Title and statement of responsibility and	:	Minority Carrier Injection In Epitaxial Schottky Barrier Diodes [Thesis]