خط مشی دسترسیدرباره ما
ثبت نامثبت نام
راهنماراهنما
فارسی
ورودورود
صفحه اصلیصفحه اصلی
جستجوی مدارک
تمام متن
منابع دیجیتالی
رکورد قبلیرکورد بعدی
Document Type : Latin Dissertation
Language of Document : English
Record Number : 151103
Doc. No : ET22895
Main Entry : Shaikh Hasibul Majid
Title Proper : Minority Carrier Injection In Epitaxial Schottky Barrier Diodes
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : Lightly doped semiwnductor region of an epitazial Schottky B a m k (SB) diodeis capable of sustaining large reverse voltage- To fabricute such SB diodes, higherresistivity and thicker layers are needed. The high resistance has detrr-mental efiecton the performance of SB diode. The resistance can be reduced by minority cum-erinjection. An SB diode with higher barn-er height injects an appreciable amountof minority cam-em at low fonuard bias voltage. The J-V characteristic of an SBdiode with injection of minority carriers are signifiuzntly d t e d from the classicalezponentid relatiotrship. To analyze the different characteristics of an SB diode amodd in wrpor~ting drift, diffusion currents, recombination and blocking propertiesof the lowhigh (n-n') interface is developed. At low level of znjection the J- Vfollows dassical relationship. A significant deviation in J-V characteristic from itsezponential behaviour..,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL46123.pdf
Title and statement of responsibility and : Minority Carrier Injection In Epitaxial Schottky Barrier Diodes [Thesis]
 
 
 
(در صورت عدم وضوح تصویر اینجا را کلیک نمایید)