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Document Type : Latin Dissertation
Language of Document : English
Record Number : 150971
Doc. No : ET22763
Main Entry : Hung-Chen Chang
Title Proper : THE ENHANCEMENT OF IrMn SPIN-VALVE PERFORMANCE BY INTRODUCTION OF OXYGEN LAYERS
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : The oxygen exposure effect in single (bottom) and dual IrMn spin-valves isreported. The oxygen exposure position in the single spin-valve was within the pinnedIayer. Different oxygen exposure dosages were studied in single spin-valve. Theexposure in the dual spin-valve was studied in different positions: the bottom pinned.bottom spacer. top spacer. and top pinned layers. The sheet resistance and interlayercoupling field of both single and dual spin-valves were reduced by the exposure tooxygen. These results indicate that a smooth interface as a result of the oxygen exposurewas formed. This smooth interface enhances the specular electron scattering. Therefore.,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL45989.pdf
Title and statement of responsibility and : THE ENHANCEMENT OF IrMn SPIN-VALVE PERFORMANCE BY INTRODUCTION OF OXYGEN LAYERS [Thesis]
 
 
 
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