Enhanced AMR in Thin NiaoFe10 Film Using (Ni80Fe20)56CrU or Ni5&rq2 Underlayer

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" Enhanced AMR in Thin NiaoFe10 Film Using (Ni80Fe20)56CrU or Ni5&rq2 Underlayer "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	150928
Doc. No	:	ET22720
Main Entry	:	TARNEEROG
Title Proper	:	Enhanced AMR in Thin NiaoFe10 Film Using (Ni80Fe20)56CrU or Ni5rq2 Underlayer
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Large enhancement in anisotropic magnetoresistance (ARR or AMR) in Nidezodeposited on a thin (Ni&e2o)&r~ or Ni&r2 undetlayer was found. The maximumLUUR was observed using the Cr alloy underlayer with 40 to 45 wt?h Cr ondcorresponding to a thickness of approximately 45 A underlayer. The enhancement of 50to 150 was observed for 60 to 500 A thick NbFez0. AR/R of 120 A thick Ni*film is 3.6 - 3.5 , 2.5 , and 1.8 when &posited with (Nide&&rrr, Ni&r4z,Ta, and without underlayer respectively. The ARR enhancement is attributed to thedecrease in the film resistivity (p) and the increase in anisotropic resistivity (A p) of the,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL45946.pdf
Title and statement of responsibility and	:	Enhanced AMR in Thin NiaoFe10 Film Using (Ni80Fe20)56CrU or Ni5rq2 Underlayer [Thesis]