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Document Type : Latin Dissertation
Language of Document : English
Record Number : 150928
Doc. No : ET22720
Main Entry : TARNEEROG
Title Proper : Enhanced AMR in Thin NiaoFe10 Film Using (Ni80Fe20)56CrU or Ni5rq2 Underlayer
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : Large enhancement in anisotropic magnetoresistance (ARR or AMR) in Nidezodeposited on a thin (Ni&e2o)&r~ or Ni&r2 undetlayer was found. The maximumLUUR was observed using the Cr alloy underlayer with 40 to 45 wt?h Cr ondcorresponding to a thickness of approximately 45 A underlayer. The enhancement of 50to 150 was observed for 60 to 500 A thick NbFez0. AR/R of 120 A thick Ni*film is 3.6 - 3.5 , 2.5 , and 1.8 when &posited with (Nide&&rrr, Ni&r4z,Ta, and without underlayer respectively. The ARR enhancement is attributed to thedecrease in the film resistivity (p) and the increase in anisotropic resistivity (A p) of the,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL45946.pdf
Title and statement of responsibility and : Enhanced AMR in Thin NiaoFe10 Film Using (Ni80Fe20)56CrU or Ni5rq2 Underlayer [Thesis]
 
 
 
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