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Document Type : Latin Dissertation
Language of Document : English
Record Number : 150916
Doc. No : ET22708
Main Entry : KIRSTEN CABANAS-HOLMEN
Title Proper : ELECTROLYTIC ETCHING OF POLYCRYSTALLLNE SILICON WAFERS IN AN &--BASED SOLUTION
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : Together with ASE Americas, we isvestigated the possibility of utilizing anelectrolytic etch &g sodium hydroxide in order to replace its acid-based etchingprocess. An etching procedme is correetIy to remove damaged materid afterlaser cutting.* Three d i f f i t solutions were evaiuated= sodium hydroxide alone, sodimhydroxide with hydrogen peroxide and sodium hydroxide with bromine. The siliconwafer was made the cathode as increased etching rates occurred m this polarization. Thesolution consishg of sodium hydroxide and bromine yielded the most w e etchingrates- Varying the teqmtm demonstrated faster,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL45934.pdf
Title and statement of responsibility and : ELECTROLYTIC ETCHING OF POLYCRYSTALLLNE SILICON WAFERS IN AN &--BASED SOLUTION [Thesis]
 
 
 
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