ELECTROLYTIC ETCHING OF POLYCRYSTALLLNE SILICON WAFERS IN AN &--BASED SOLUTION

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" ELECTROLYTIC ETCHING OF POLYCRYSTALLLNE SILICON WAFERS IN AN &--BASED SOLUTION "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	150916
Doc. No	:	ET22708
Main Entry	:	KIRSTEN CABANAS-HOLMEN
Title Proper	:	ELECTROLYTIC ETCHING OF POLYCRYSTALLLNE SILICON WAFERS IN AN --BASED SOLUTION
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Together with ASE Americas, we isvestigated the possibility of utilizing anelectrolytic etch &g sodium hydroxide in order to replace its acid-based etchingprocess. An etching procedme is correetIy to remove damaged materid afterlaser cutting.* Three d i f f i t solutions were evaiuated= sodium hydroxide alone, sodimhydroxide with hydrogen peroxide and sodium hydroxide with bromine. The siliconwafer was made the cathode as increased etching rates occurred m this polarization. Thesolution consishg of sodium hydroxide and bromine yielded the most w e etchingrates- Varying the teqmtm demonstrated faster,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL45934.pdf
Title and statement of responsibility and	:	ELECTROLYTIC ETCHING OF POLYCRYSTALLLNE SILICON WAFERS IN AN --BASED SOLUTION [Thesis]