HOMOEPITAXIAL GROWTH OF 4H AND 6H-Sic IN A 75mm REACTOR

منو

" HOMOEPITAXIAL GROWTH OF 4H AND 6H-Sic IN A 75mm REACTOR "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	150911
Doc. No	:	ET22703
Main Entry	:	Thomas Eliott Schattner
Title Proper	:	HOMOEPITAXIAL GROWTH OF 4H AND 6H-Sic IN A 75mm REACTOR
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	The goal of this research project was to implement a Silicon Carbide (SIC)chemical vapor deposition (CVD) reactor to permit repeatable growth of wholewafer (75rnm diameter) epitaxial films in the Emerging Materials ResearchLaboratory (EMRL) at Mississippi State University. SIC is an epitaxial-baseddevice technology and, as a consequence, epi growth via CVD is the first andoften most critical, device fabrication step. Since devices fabricated from theselayers must operate in a nearly identical manner across the entire wafer and....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL45929.pdf
Title and statement of responsibility and	:	HOMOEPITAXIAL GROWTH OF 4H AND 6H-Sic IN A 75mm REACTOR [Thesis]