خط مشی دسترسیدرباره ما
ثبت نامثبت نام
راهنماراهنما
فارسی
ورودورود
صفحه اصلیصفحه اصلی
جستجوی مدارک
تمام متن
منابع دیجیتالی
رکورد قبلیرکورد بعدی
Document Type : Latin Dissertation
Language of Document : English
Record Number : 150856
Doc. No : ET22648
Main Entry : Smiti Bhattacharya
Title Proper : GALLIUM NITRIDE LIGHT EMITTING DIODES AND A STUDY OF ETCHING TECHNIQUES
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : In the recent years Light Emitting Diodes of impressive longevity and high efficiency havebeen produced. Gallium Nitride in particular is used in the manufacture of Blue LightEmitting Diodes because it is a direct band gap semiconductor whicli can be alloyed withA1N and InN allowing band gap energies to range from 1.9eV to 6.2eV. which allows theemission of short \vavelengths like that of blue light. A new structure for a GaN blue LEDlias been proposed. Tlie difficulty faced in met etching GaN resulted in the study of viabledry etcliing techniques. This study lias loolted into the Reactive Ion Etcliing of GalliumNitride in Sulpl~ur Hexafluoride. The use of Laser Ablation as an alternative method ofetching GaN has been studied in detail. N-type contacts have been deposited on the etchedsurface and their specific contact resistivities have been measured for different samplesunder different conditions.....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL45874.pdf
Title and statement of responsibility and : GALLIUM NITRIDE LIGHT EMITTING DIODES AND A STUDY OF ETCHING TECHNIQUES [Thesis]
 
 
 
(در صورت عدم وضوح تصویر اینجا را کلیک نمایید)