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Document Type : Latin Dissertation
Language of Document : English
Record Number : 150781
Doc. No : ET22573
Main Entry : Bharat Reddy Pemmireddy
Title Proper : FLUX PROFILE MODELLING USING NUMERICAL METHODS
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : Molecular beam Epitaxy (MBE) is a physical vapor deposition system, used to growsemiconductor layers (epilayers). In order to increase the economics of MBE, theindustry has increased the size and number of wafers processed in one stage. This lead to,non-uniformity in thickness of material grown. In this work a process simulation toolbased on numerical methods was developed to study different parameters which affectthe thickness. The process of emission in open cells was identified as free evaporationand for computer simulation of these types of cells Model I was developed. The process....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL45797.pdf
Title and statement of responsibility and : FLUX PROFILE MODELLING USING NUMERICAL METHODS [Thesis]
 
 
 
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