DESIGN, FABRICATION AND TESTING OF P-CHANNEL ENHANCEMENT MODE TRANSISTORS

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" DESIGN, FABRICATION AND TESTING OF P-CHANNEL ENHANCEMENT MODE TRANSISTORS "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	150752
Doc. No	:	ET22544
Main Entry	:	Usha R. Gowrishetty
Title Proper	:	DESIGN, FABRICATION AND TESTING OF P-CHANNEL ENHANCEMENT MODE TRANSISTORS
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	A process for fabricating PMOS transistors and test devices has been developedfor educational purposes as part of a microfabrication undergraduatelgraduate laboratorycourse at the University of Louisville. This is to help students from multiple disciplines tounderstand and perform basic microfabrication processes. Several designs of PMOSdevices were fabricated using standard processes such as oxidation, photolithography,diffusion, and sputtering. Process characterization involved testing PMOS transistors,Cross Bridge Kelvin Structures, and....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL45767.pdf
Title and statement of responsibility and	:	DESIGN, FABRICATION AND TESTING OF P-CHANNEL ENHANCEMENT MODE TRANSISTORS [Thesis]