COMPACT THERMAL MODELING OF DIELECTRICALLY-ISOLATED BIPOLAR JUNCTION TRANSISTORS AND DEVELOPMENTS IN CIRCUIT SIMULATION

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" COMPACT THERMAL MODELING OF DIELECTRICALLY-ISOLATED BIPOLAR JUNCTION TRANSISTORS AND DEVELOPMENTS IN CIRCUIT SIMULATION "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	150630
Doc. No	:	ET22422
Main Entry	:	SIDDHARTH TARACHAND NASHINEY
Title Proper	:	COMPACT THERMAL MODELING OF DIELECTRICALLY-ISOLATED BIPOLAR JUNCTION TRANSISTORS AND DEVELOPMENTS IN CIRCUIT SIMULATION
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	The need for high speed analog ICs is growing with the ever-increasing demandfor bandwidth. Dielectrically-Isolated Bipolar Junction Transistors which incorporateadvanced full dielectric isolation techniques are suitable for high speed analog ICs. Thelow thermal conductivity of the oxide used in the isolation impedes the flow of heataway from the device resulting in higher operating temperatures. The thermal effects onoperating characteristics need to be modeled in circuit simulations through suitabledevice models and circuits. The methods generally used for determining the thermal....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL45638.pdf
Title and statement of responsibility and	:	COMPACT THERMAL MODELING OF DIELECTRICALLY-ISOLATED BIPOLAR JUNCTION TRANSISTORS AND DEVELOPMENTS IN CIRCUIT SIMULATION [Thesis]