NOISE STUDY OF AN lNDIUM TIN OXIDE-GATE CHARGE-COUPLED DEVICE OUTPUT AMPLIFER MOSFET

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" NOISE STUDY OF AN lNDIUM TIN OXIDE-GATE CHARGE-COUPLED DEVICE OUTPUT AMPLIFER MOSFET "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	150543
Doc. No	:	ET22335
Main Entry	:	Gloria Putnam
Title Proper	:	NOISE STUDY OF AN lNDIUM TIN OXIDE-GATE CHARGE-COUPLED DEVICE OUTPUT AMPLIFER MOSFET
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	An ITO-gated CCD amplifier MOSFET was manufactured and characterized for noiseperformance in comparison to a standard poly silicon-gated MOSFET of similargeometry and processing. Since ITO-gated CCD shift registers are known to generatemore surface dark current due to a higher concentration of surface states. it was expectedthat the ITO-gated amplifier would show higher I /f noise. However. the iTO-gatedamplifier was shown to have similar i/f and white noise spectrums under normaloperating conditions. The [TO-gated MOSFET was shown to demonstrate higher Ilfnoise than its poly-gated counterpart when the channel is forced closer to the surf'ace.indicating a higher oxide trap density under the IT0 gate.-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL45541.pdf
Title and statement of responsibility and	:	NOISE STUDY OF AN lNDIUM TIN OXIDE-GATE CHARGE-COUPLED DEVICE OUTPUT AMPLIFER MOSFET [Thesis]