COhlPLT.ATI0N.X FLUID DW.-\R.IICS XIODELING OF SIC CHEM1C.X \'.APOR DEPOSITION

منو

" COhlPLT.ATI0N.X FLUID DW.-\R.IICS XIODELING OF SIC CHEM1C.X \'.APOR DEPOSITION "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	150481
Doc. No	:	ET22273
Main Entry	:	Yingquan Song
Title Proper	:	COhlPLT.ATI0N.X FLUID DW.-\R.IICS XIODELING OF SIC CHEM1C.X \'.APOR DEPOSITION
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Computational h i d dynamics (CFD) modeling was ernploved to simulate chemlcal\.apor deposition (CVD ) of silicon carbide. tntluences of precursor concentration. feedtlow rate. temperature. pressure. heat transfer and reactor geometry on Sic CYD wereinvestigated systematically. The increase in Sic deposition rate with increasinsprecursor concentration. increasing feed tiow rate and decreasing deposition-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL45478.pdf
Title and statement of responsibility and	:	COhlPLT.ATI0N.X FLUID DW.-\R.IICS XIODELING OF SIC CHEM1C.X \'.APOR DEPOSITION [Thesis]