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Document Type : Latin Dissertation
Language of Document : English
Record Number : 150357
Doc. No : ET22149
Main Entry : Wei-Yuan Lu
Title Proper : A Design Study on the Scaling Limit of Ultra-Thin Silicon-on-Insulator MOSFETs
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : As bulk CMOS is approaching its scaling limit, SO1 CMOS is gaining moreand more attentions and is considered as a potential candidate for achieving 10-nmCMOS. Fully-depleted SO1 MOSFETs have several inherent advantages over bulkMOSFETs-low junction capacitance. no body effect and no need for body doping toconfine gate depletion. This dissertation presents a comprehensive, 2-D simulation-based design study on the scaling limit of ultra-thin silicon-on-insulator MOSFETs .xix...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL45353.pdf
Title and statement of responsibility and : A Design Study on the Scaling Limit of Ultra-Thin Silicon-on-Insulator MOSFETs [Thesis]
 
 
 
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