111-V Semiconductor Photodetectors for Infrared Applications

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" 111-V Semiconductor Photodetectors for Infrared Applications "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	150353
Doc. No	:	ET22145
Main Entry	:	Hui Shao
Title Proper	:	111-V Semiconductor Photodetectors for Infrared Applications
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	This thesis demonstrated the 111-V semiconductor infrared photodetectors grownby solid source molecular beam epitaxy utilizing novel materials, device structures andsubstrate orientations. The photodetectors investigated in this thesis have spectralresponse ranging from 1.3ym to 12pm. Three photodetector structures were investigated:heterojunciton photodiodes, heterojunction phototransistors, and superlattice photodiodes.Chapter 2 and 3 discuss two infrared heterojunction photodiodes at room...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL45349.pdf
Title and statement of responsibility and	:	111-V Semiconductor Photodetectors for Infrared Applications [Thesis]