خط مشی دسترسیدرباره ما
ثبت نامثبت نام
راهنماراهنما
فارسی
ورودورود
صفحه اصلیصفحه اصلی
جستجوی مدارک
تمام متن
منابع دیجیتالی
رکورد قبلیرکورد بعدی
Document Type : Latin Dissertation
Language of Document : English
Record Number : 150318
Doc. No : ET22110
Main Entry : RASHMI JHA
Title Proper : INTERACTION OF METAL GATES WITH HIGH-K GATE DIELECTRICS IN ADVANCED CMOS DEVICES
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : The continued scaling of CMOS devices beyond the 45 nm node requiressuccessful integration of dual worlc hnction metal gate electrodes with high-lc gatedielectrics. Recent reports have shown the feasibility of hafnium based high-lc gatedielectrics in advanced CMOS devices. However, achieving the appropriate band-edgeeffective worlc hnction (Om,&) of metal gates compatible for NMOS and PMOS devicesin self aligned process of CMOS fabrication has been a focus of tremendous research.Most of the candidate metal gates suffer from the instability in O,.,ff after hightemperature anneals leading to a high threshold voltage of devices. The cause of this...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL45310.pdf
Title and statement of responsibility and : INTERACTION OF METAL GATES WITH HIGH-K GATE DIELECTRICS IN ADVANCED CMOS DEVICES [Thesis]
 
 
 
(در صورت عدم وضوح تصویر اینجا را کلیک نمایید)