INTERACTION OF METAL GATES WITH HIGH-K GATE DIELECTRICS IN ADVANCED CMOS DEVICES

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" INTERACTION OF METAL GATES WITH HIGH-K GATE DIELECTRICS IN ADVANCED CMOS DEVICES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	150318
Doc. No	:	ET22110
Main Entry	:	RASHMI JHA
Title Proper	:	INTERACTION OF METAL GATES WITH HIGH-K GATE DIELECTRICS IN ADVANCED CMOS DEVICES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	The continued scaling of CMOS devices beyond the 45 nm node requiressuccessful integration of dual worlc hnction metal gate electrodes with high-lc gatedielectrics. Recent reports have shown the feasibility of hafnium based high-lc gatedielectrics in advanced CMOS devices. However, achieving the appropriate band-edgeeffective worlc hnction (Om,&) of metal gates compatible for NMOS and PMOS devicesin self aligned process of CMOS fabrication has been a focus of tremendous research.Most of the candidate metal gates suffer from the instability in O,.,ff after hightemperature anneals leading to a high threshold voltage of devices. The cause of this...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL45310.pdf
Title and statement of responsibility and	:	INTERACTION OF METAL GATES WITH HIGH-K GATE DIELECTRICS IN ADVANCED CMOS DEVICES [Thesis]