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Document Type : Latin Dissertation
Language of Document : English
Record Number : 150316
Doc. No : ET22108
Main Entry : Dr. Leda Lunardi
Title Proper : Characterization and Modeling of 111-N MOS-HFETs for High Frequency Applications
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : This research focuses on the characterization and modeling of AlGaN/InGaN110s-HFETs. DC and small signal S parameter measurements were used to characterizethese FETs and the associated AlGaN/InGaN h1OS lieterojunction varactors. ,411 equiv-alent circuit model mas developed for the AlGan'/InGan' h1OS varactor. The model fitsmeasured S-parameters of tlie device from 45 hIHz to 10 GHz over the entire operatingrange of the dexice (gate bias varies froin -8V to GV). The extracted gate capacitance in-dicated formation of an accumulation cliannel in the AlGaN barrier layer in forward bias(Vg 3V). A physics-based large...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL45308.pdf
Title and statement of responsibility and : Characterization and Modeling of 111-N MOS-HFETs for High Frequency Applications [Thesis]
 
 
 
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