Characterization and Modeling of 111-N MOS-HFETs for High Frequency Applications

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" Characterization and Modeling of 111-N MOS-HFETs for High Frequency Applications "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	150316
Doc. No	:	ET22108
Main Entry	:	Dr. Leda Lunardi
Title Proper	:	Characterization and Modeling of 111-N MOS-HFETs for High Frequency Applications
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	This research focuses on the characterization and modeling of AlGaN/InGaN110s-HFETs. DC and small signal S parameter measurements were used to characterizethese FETs and the associated AlGaN/InGaN h1OS lieterojunction varactors. ,411 equiv-alent circuit model mas developed for the AlGan'/InGan' h1OS varactor. The model fitsmeasured S-parameters of tlie device from 45 hIHz to 10 GHz over the entire operatingrange of the dexice (gate bias varies froin -8V to GV). The extracted gate capacitance in-dicated formation of an accumulation cliannel in the AlGaN barrier layer in forward bias(Vg 3V). A physics-based large...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL45308.pdf
Title and statement of responsibility and	:	Characterization and Modeling of 111-N MOS-HFETs for High Frequency Applications [Thesis]