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Document Type : Latin Dissertation
Language of Document : English
Record Number : 150308
Doc. No : ET22100
Main Entry : Romeo de la Cruz del Rosario, Jr.
Title Proper : MEASUREMENT AND MODELING OF EFFECTS OF TEMPERATURE AND HOT ELECTRONS ON HEMTS AND THEIR IMPACTS ON DEGRADATION OF LARGE SIGNAL RESPONSE
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : The small and large signal characteristics of High Electron Mobility Transistors(HEMTs), at DC and between 45 MHz to 50 GHz, have been compared at varyingoperating temperatures ranging from -50 to 150 C. Diminishing performance withincreasing temperature was evidenced by the changes in DC current, small signal gain,and extracted large signal model parameters. Comparison to measured two-toneintermodulation data verified the predicted temperature effect on RF output power,indicating that a simple temperature dependence parameter can be incorporated into thelarge signal model to better predict higher level circuit/system performance withtemperature. In the same study, we used a new method for studying hot electrondegradation effects by performing large signal measurement and model extraction onHEMTs stressed with high drain to source voltages. Temperature dependence of the kinkeffect was observed as well as clear evidence of the detrimental effects of breakdown...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL45300.pdf
Title and statement of responsibility and : MEASUREMENT AND MODELING OF EFFECTS OF TEMPERATURE AND HOT ELECTRONS ON HEMTS AND THEIR IMPACTS ON DEGRADATION OF LARGE SIGNAL RESPONSE [Thesis]
 
 
 
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