Enhanced Integrability of Porous Low-Permittivity Dielectrics for Improved Reliability in Copper-based Interconnects

منو

" Enhanced Integrability of Porous Low-Permittivity Dielectrics for Improved Reliability in Copper-based Interconnects "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	150164
Doc. No	:	ET21956
Main Entry	:	Fu Luo
Title Proper	:	Enhanced Integrability of Porous Low-Permittivity Dielectrics for Improved Reliability in Copper-based Interconnects
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Achieving the aggressive device performance metrics demanded by themicroelectronics industry dictates the use of low dielectric constant ('low-k') insulatingmaterials to reduce the capacitive component of the interconnect-related RC signalpropagation delay. In particular, to meet interconnect performance requirements for the65 nrn node and beyond, one approach is to introduce significant levels of porosity intothe interlayer dielectric (ILD) films. However, the incorporation of porosity leads to anumber of integration challenges, including increased reliability issues due to the openpores distributed on the sidewalls of viasltrenches. The research discussed in this paper.,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL45151.pdf
Title and statement of responsibility and	:	Enhanced Integrability of Porous Low-Permittivity Dielectrics for Improved Reliability in Copper-based Interconnects [Thesis]