The effects of ion bombardment during deposition upon the properties of hydrogenated amorphous silicon-germanium thin films and photovoltaic devices

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" The effects of ion bombardment during deposition upon the properties of hydrogenated amorphous silicon-germanium thin films and photovoltaic devices "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	150050
Doc. No	:	ET21842
Main Entry	:	Matthew Alan Ring
Title Proper	:	The effects of ion bombardment during deposition upon the properties of hydrogenated amorphous silicon-germanium thin films and photovoltaic devices
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Ion bombardment is inherent in the growth of amorphous materials byconventional PECVD methods, such as electron cyclotron resonance (ECR) ofradio-frequency (rf) discharge. In these methods plasma ions are necessary todecompose the source gases; however these ions also impinge upon the growingfilm surface, imparting their energy to the material. In conventional depositiontechniques it is difficult to isolate the effects of the ions so a novel approach is takenin this research where an ECR ion source is attached to a "hot-wire" depositionreactor. This unique reaction system allows researchers to vary the ionbombardment density and energy to study the effects of the ion bombardment on theresulting material.,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL45030.pdf
Title and statement of responsibility and	:	The effects of ion bombardment during deposition upon the properties of hydrogenated amorphous silicon-germanium thin films and photovoltaic devices [Thesis]