NEW HARD LAYER DESIGN OF MRAM BASED ON RING ELEMENTS

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" NEW HARD LAYER DESIGN OF MRAM BASED ON RING ELEMENTS "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	150014
Doc. No	:	ET21806
Main Entry	:	ANAND SUBRA MAN1
Title Proper	:	NEW HARD LAYER DESIGN OF MRAM BASED ON RING ELEMENTS
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Memory devices find their application in almost every corner of the world with newdevelopments cropping up everyday. There has been considerable growth in the use of magneticsensors and magnetic storage media like computer disks and random access memories.Phenomena such as anisotropic magnetoreistance (AMR), giant magnetoresistance (GMR), andtunneling magnetoresistance (TMR) have also brought in a wider scope to the development ofnew and better memory devices.Magnetic Random Access Memories based on structures of..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL44992.pdf
Title and statement of responsibility and	:	NEW HARD LAYER DESIGN OF MRAM BASED ON RING ELEMENTS [Thesis]