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Document Type : Latin Dissertation
Language of Document : English
Record Number : 149909
Doc. No : ET21701
Main Entry : Petru Andrei
Title Proper : ANALYSIS OF FLUCTUATIONS IN SEMICONDUCTOR DEVICES
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : The random nature of ion implantation and diffusion processes as well asinevitable tolerances in fabrication result in random fluctuations of dopingconcentrations and oxide thickness in semiconductor devices. These fluctuations areespecially pronounced in ultrasmall (nanoscale) semiconductor devices when thespatial scale of doping and oxide thickness variations become comparable with thegeometric dimensions of devices. In the disseration, the effects of these fluctuationson device characteristics are analyzed by using a new technique for the analysis ofrandom doping and oxide thickness induced fluctuations. This technique is universal..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL44883.pdf
Title and statement of responsibility and : ANALYSIS OF FLUCTUATIONS IN SEMICONDUCTOR DEVICES [Thesis]
 
 
 
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