LOW DIELECTRIC CONSTANT MATERIALS AND PROCESSES FOR INTERLAYER DIELECTRIC APPLICATIONS

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" LOW DIELECTRIC CONSTANT MATERIALS AND PROCESSES FOR INTERLAYER DIELECTRIC APPLICATIONS "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	149853
Doc. No	:	ET21645
Main Entry	:	RAMAKRISHNA VEDULA
Title Proper	:	LOW DIELECTRIC CONSTANT MATERIALS AND PROCESSES FOR INTERLAYER DIELECTRIC APPLICATIONS
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	At 0.18 microns and below minimum device dimensions in Ultra Large ScaleIntegrated Circuits, signal net parasitic delay amounts to 80 of the overall path delay.This leads to serious problems relating to signal timing, crosstalk, noise and powerconsumption. Although Copper is being used as an alternative to Aluminuminterconnects to reduce the resistive component of the RC delays, finding a suitablematerial to replace Silicon Dioxide (SiO2) as the interlayer dielectric poses serious..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL44822.pdf
Title and statement of responsibility and	:	LOW DIELECTRIC CONSTANT MATERIALS AND PROCESSES FOR INTERLAYER DIELECTRIC APPLICATIONS [Thesis]