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" INVESTIGATION OF 4H AND 6H-SiC THIN FILMS AND SCHOTTKY DIODES USING DEPTH-DEPENDENT CATHODOLUMINESCENCE SPECTROSCOPY "


Document Type : Latin Dissertation
Language of Document : English
Record Number : 149840
Doc. No : ET21632
Main Entry : Serhii Tumakha, B.S., M.S.
Title Proper : INVESTIGATION OF 4H AND 6H-SiC THIN FILMS AND SCHOTTKY DIODES USING DEPTH-DEPENDENT CATHODOLUMINESCENCE SPECTROSCOPY
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : Replacing Si with wide band gap (WBG) semiconductors in power electronics isexpected to have a major technological impact in the energy and transport industries.SiC-based devices have already been introduced, but their performance and developmenthas been challenged by the material degradation and problems in further producingreliable contacts and high-quality interfaces.This dissertation investigates the native defects on SiC surfaces and interfacesusing nanoscale sensitive techniques. The effect of such defects on the performance ofthe devices is also investigated..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL44809.pdf
Title and statement of responsibility and : INVESTIGATION OF 4H AND 6H-SiC THIN FILMS AND SCHOTTKY DIODES USING DEPTH-DEPENDENT CATHODOLUMINESCENCE SPECTROSCOPY [Thesis]
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TL44809.pdf
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