CARBON NANOTUBE DEVICES: GROWTH, IMAGING, AND ELECTRONIC PROPERTIES

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" CARBON NANOTUBE DEVICES: GROWTH, IMAGING, AND ELECTRONIC PROPERTIES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	149811
Doc. No	:	ET21603
Main Entry	:	Todd Harold Brintlinger
Title Proper	:	CARBON NANOTUBE DEVICES: GROWTH, IMAGING, AND ELECTRONIC PROPERTIES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	This dissertation focuses on growth, fabrication, and electroniccharacterization of carbon nanotube (CNT) devices. A technique for imaging CNTson insulating substrates with the scanning electron microscope (SEM) will bedescribed. This technique relies on differential charging of the CNT relative to thesurrounding insulator. In addition, it is not only quicker than using scanning probemicroscopy (SPM), but is also useful for identifying conducting pathways within anassortment of CNTs and metallic contacts.CNT field effect transistors (FETs) fabricated on strontium titanate gatedielectric show transconductances normalized by channel width of 8900 S/m, greatlyexceeding that in Si FETs. Intriguingly, the transconductance cannot be explainedwithin the conventional FET or Schottky-barrier models. To explain this, it isproposed that there is Schottky-barrier lowering due to high electric fields at theCNT/contact interface.Exploring novel CNT-FET lithography, I demonstrate focused electron beaminduced deposition (FEBID) of pure gold for CNT device electrodes.tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL44778.pdf
Title and statement of responsibility and	:	CARBON NANOTUBE DEVICES: GROWTH, IMAGING, AND ELECTRONIC PROPERTIES [Thesis]