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" A Process Sensitive Device "


Document Type : Latin Dissertation
Language of Document : English
Record Number : 149542
Doc. No : ET21334
Main Entry : AMY REINE MCGOWAN
Title Proper : A Process Sensitive Device
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : A completely analytic two-dimensional model for a submicronetal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is developedwith the diffusion coe cient dependent upon the doping concentration. Forthe first time, the analytical link between the variable doping concentrationand the device characteristics has been solved. This model continuesprevious work from the literature.
Subject : Electericl tess
: برق
electronic file name : TL44491.pdf
Title and statement of responsibility and : A Process Sensitive Device [Thesis]
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TL44491.pdf
TL44491.pdf
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