HYDROGEN BARRIERS FOR FERROELECTRIC MEMORIES

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" HYDROGEN BARRIERS FOR FERROELECTRIC MEMORIES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	149475
Doc. No	:	ET21267
Main Entry	:	SHERIL SATIJA, B. Tech.
Title Proper	:	HYDROGEN BARRIERS FOR FERROELECTRIC MEMORIES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	With the scaling required in the semiconductor industry, nonvolatile memory cell areas canbe reduced by placing the associated capacitor on the top of the transistor in a back-end-ofline(BEOL) process. Additionally, a low temperature forming gas (N2:H2 ب‍ -FG(پ anneal ~400oC is often employed to passivate the dangling bonds at the Si/SiO2 interface of thetransistor. Unfortunately, degradation of the ferroelectric capacitor can occur at thesetemperatures in the associated hydrogen (reducing) ambient resulting from the BEOL processanneals. In this.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL44423.pdf
Title and statement of responsibility and	:	HYDROGEN BARRIERS FOR FERROELECTRIC MEMORIES [Thesis]