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Document Type : Latin Dissertation
Language of Document : English
Record Number : 149475
Doc. No : ET21267
Main Entry : SHERIL SATIJA, B. Tech.
Title Proper : HYDROGEN BARRIERS FOR FERROELECTRIC MEMORIES
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : With the scaling required in the semiconductor industry, nonvolatile memory cell areas canbe reduced by placing the associated capacitor on the top of the transistor in a back-end-ofline(BEOL) process. Additionally, a low temperature forming gas (N2:H2 ب‍ -FG(پ anneal ~400oC is often employed to passivate the dangling bonds at the Si/SiO2 interface of thetransistor. Unfortunately, degradation of the ferroelectric capacitor can occur at thesetemperatures in the associated hydrogen (reducing) ambient resulting from the BEOL processanneals. In this.
Subject : Electericl tess
: برق
electronic file name : TL44423.pdf
Title and statement of responsibility and : HYDROGEN BARRIERS FOR FERROELECTRIC MEMORIES [Thesis]
 
 
 
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