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" CMOS 110 STUDY ON LATCHUP AND ESD INTO THE NANOSCALING ERA WITH DFM CONSIDERATIONS "


Document Type : Latin Dissertation
Language of Document : English
Record Number : 149462
Doc. No : ET21254
Main Entry : Shi-hsuan (Stefan) Tu
Title Proper : CMOS 110 STUDY ON LATCHUP AND ESD INTO THE NANOSCALING ERA WITH DFM CONSIDERATIONS
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : With CMOS transistors being scaled well into the nanometer regime, and ICdesigns becoming larger, faster and more complex, I/Os become a very important designfactor. As daily consumer technology constantly requires more and more bandwidth andspeed for multimedia applications, more and more industry leaders increase functionalitywhile decreasing the size.
Subject : Electericl tess
: برق
electronic file name : TL44409.pdf
Title and statement of responsibility and : CMOS 110 STUDY ON LATCHUP AND ESD INTO THE NANOSCALING ERA WITH DFM CONSIDERATIONS [Thesis]
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TL44409.pdf
TL44409.pdf
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