HIGH-PERFORMANCE 1.55-pM GAINNAsSB LASERS GROWN ON GAAS

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" HIGH-PERFORMANCE 1.55-pM GAINNAsSB LASERS GROWN ON GAAS "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	149290
Doc. No	:	ET21082
Main Entry	:	Seth Robert Bank
Title Proper	:	HIGH-PERFORMANCE 1.55-pM GAINNAsSB LASERS GROWN ON GAAS
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Next-generation local and metro-area optical networks require high-performancelasers, detectors, and modulators operating at ~ 1 . 5 5 pm. In contrast to long-haulnetworks, components must be very inexpensive, power efficient, and producible inhigh volumes - all with little sacrifice to performance. Two classes of lasers are re-quired. The first is low-power ( ~ 1 - 1 0 mW) 1.55-pm communication sources, such asvertical-cavity surface-emitting lasers (VCSELs), that must be insensitive to ambi-ent temperature and operable at high modulation rates. The second class is higheroutput power ( ~ 3 0 0 mW) lasers emitting at shorter wavelengths ( ~ 1 . 4 8 pm) forpumping Raman and doped fiber amplifiers.This work describes.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL44230.pdf
Title and statement of responsibility and	:	HIGH-PERFORMANCE 1.55-pM GAINNAsSB LASERS GROWN ON GAAS [Thesis]