Irradiation Induced Dislocations and Vacancy Generation in Single Crystal Yttria Stabilized Zirconia

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" Irradiation Induced Dislocations and Vacancy Generation in Single Crystal Yttria Stabilized Zirconia "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	149284
Doc. No	:	ET21076
Main Entry	:	JILL NOEL JOHNSEN
Title Proper	:	Irradiation Induced Dislocations and Vacancy Generation in Single Crystal Yttria Stabilized Zirconia
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	A determination of the most effective method of introducing defect clusters andforming nanocrystals in single crystal Yttria Stabilized Zirconia (YSZ) to increase itsoxygen ion conductivity for use in solid oxide &el cell has been investigated usingseveral techniques. High-energy particle irradiation using 800 keV electrons and 20MeV protons and Ar' and Xe' ' ion implantation promote the introduction of defects.Thermal annealing and temperature cycling were performed both ex-situ and in-situ in aTEM to study the dynamic recovery behavior of the defects introduced by irradiation andthe nucleation and growth of nanocrystals.This analysis found multiple outconles to both light particle irradiation, withelectrons and protons, and heavy charged particle irradiation, including Ar' and Xe"Electron irradiation produced very few vacancies, and therefore a very low dislocationdensity after high temperature annealing. The Xe' ' and Ar' irradiated samples show ahigh density of vacancy clusters. Evidence also shows nanocrystalline formation in Xe"irradiated YSZ after a 20 minute anneal at 1 040پ‍-C with grain sizes on the order of 10-.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL44224.pdf
Title and statement of responsibility and	:	Irradiation Induced Dislocations and Vacancy Generation in Single Crystal Yttria Stabilized Zirconia [Thesis]