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" Low Phase Noise p-HEMT VCO Design "


Document Type : Latin Dissertation
Language of Document : English
Record Number : 149262
Doc. No : ET21054
Main Entry : Vikas Manan
Title Proper : Low Phase Noise p-HEMT VCO Design
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : HEMTبs oض‍er the lowest noise figure when compared to all other devices. Theyare however, not the first choice for VCOبs. The main reason for this the high1/f noise. HEMTبs have very high 1/f noise corner frequencies when comparedto other devices, especially HBTبs. This 1/f noise gets upconverted close to thecarrier and gives poor phase noise performance. 1/f noise upconversion can bereduced by good circuit design. The main aim of this work was to reduce the.
Subject : Electericl tess
: برق
electronic file name : TL44202.pdf
Title and statement of responsibility and : Low Phase Noise p-HEMT VCO Design [Thesis]
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TL44202.pdf
TL44202.pdf
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