Growth and Characterization of Nonpolar and Semipolar Group-III Nitrides-Based Heterostructures and Devices

منو

" Growth and Characterization of Nonpolar and Semipolar Group-III Nitrides-Based Heterostructures and Devices "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	149260
Doc. No	:	ET21052
Main Entry	:	Arpan Chakraborty
Title Proper	:	Growth and Characterization of Nonpolar and Semipolar Group-III Nitrides-Based Heterostructures and Devices
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Conventional state-of-the-art wیrtzite nitrides based light-emitters, grownalong the polar c-direction, are characterized by the presence of polarization-inducedelectrostatic fields in the quantum wells. These built-in fields are detrimental to theperformance of optoelectronic devices. Growth of light-emitters along nonpolar andsemipolar directions is an effective means to circumvent the adverse effects ofpolarization. This dissertation focuses on the growth and characterization of nonpolarand semipolar (Al, Ga, In)N based heterostructures and devices. Two nonpolarplanes, a- and m-, and two semipolar planes, ( 1 1 10 ) and ( 3 1 10 ), have beeninvestigated in this thesis..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL44200.pdf
Title and statement of responsibility and	:	Growth and Characterization of Nonpolar and Semipolar Group-III Nitrides-Based Heterostructures and Devices [Thesis]