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Document Type : Latin Dissertation
Language of Document : English
Record Number : 149172
Doc. No : ET20964
Main Entry : AMBER INFANTA FRANCIS
Title Proper : DEVICE MODELING AND SIMULATION OF A STATIC RAM MEMORY CELL USING CARBON NANOTUBE TRANSISTORS
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : The VLSI technology has shrunk the size of the MOSFET transistorscontinuously over the decade. According to Moore's Law, the number of transistorsper chip that yields the minimum cost per transistor has increased by a rate ofroughly a factor of two per 18 months. These have significant effects on SRAMcell. They include random fluctuations of electrical characteristics and substantialleakage current. This disrupts the stability of the cell and makes them difficult to.
Subject : Electericl tess
: برق
electronic file name : TL44110.pdf
Title and statement of responsibility and : DEVICE MODELING AND SIMULATION OF A STATIC RAM MEMORY CELL USING CARBON NANOTUBE TRANSISTORS [Thesis]
 
 
 
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