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Document Type : Latin Dissertation
Language of Document : English
Record Number : 149109
Doc. No : ET20901
Main Entry : Brian Michael Dufrene
Title Proper : THE MULTIPLE GATE MOS-JFET
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : A new multiple-gate transistor, the SOI MOS-JFET, is presented. This devicecombines the MOS field effect and junction field effect within one transistor body.Measured I-V characteristics are provided to illustrate typical modes of operation and thefunctionality associated with each gate. Two-dimensional simulations of the deviceبscross-section will be presented to illustrate various conduction modes under different biasconditions. Te st results indicate the MOS-JFET is well suited for both high- voltage andlow-voltage circuit demands for systems-on-a-chip applications on SOI technology.Analog building-block circuits based the MOS-JFET are also presented..
Subject : Electericl tess
: برق
electronic file name : TL44047.pdf
Title and statement of responsibility and : THE MULTIPLE GATE MOS-JFET [Thesis]
 
 
 
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