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" SiC ETCH DEVELOPMENT IN A LAM TCP 9400SE II SYSTEM "


Document Type : Latin Dissertation
Language of Document : English
Record Number : 149107
Doc. No : ET20899
Main Entry : Janna Rea Bonds
Title Proper : SiC ETCH DEVELOPMENT IN A LAM TCP 9400SE II SYSTEM
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : SiC etch development has been performed in a Lam TCP 9400SE II system (asystem meant for polysilicon etching and modified for SiC etching). SiC etching hasnever been reported in this particular system. Various parameters (carrier material,pressure, gas additives, gas flow, and electrode power) were examined and their effectsdetermined on etch rate andH2.
Subject : Electericl tess
: برق
electronic file name : TL44045.pdf
Title and statement of responsibility and : SiC ETCH DEVELOPMENT IN A LAM TCP 9400SE II SYSTEM [Thesis]
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TL44045.pdf
TL44045.pdf
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